2014. 3. 31 1/2 semiconductor technical data PG12FBUSC single line tvs diode for esd protection in portable electronics revision no : 6 protection in portable electronics applications.features h 350 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 15a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects on i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 350 w peak pulse current (tp=8/20 s) i pp 15 a operating temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 12 v reverse breakdown voltage v br i t =1ma 13.8 - - v reverse leakage current i r v r =12v - - 1 a clamping voltage v c i pp =15a, tp=8/20 s - - 25 v junction capacitance c j v r =0v, f=1mhz - - 100 pf electrostatic discharge esd iec61000-4-2 air 20 - - kv contact 20 - - downloaded from: http:///
2014. 3. 31 2/2 PG12FBUSC revision no : 6 downloaded from: http:///
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